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J. Korean Ceram. Soc. 2020; 57(1): 73-79.
DOI: https://doi.org/10.1007/s43207-019-00006-y
Resistive switching characteristic of Ce0.9Y0.1O2/TiO2 bi‑layer structure by photochemical metal‑organic deposition
S.‑E. Kim, J.‑G. Lee, I.‑Y. Choi, H.‑E. Kim, and H.‑S. Lee
Sneak current is one of the main bottlenecks for dense crossbar array resistive random access memory. This study reports highly non-linear resistive switching characteristic from Ce0.9Y0.1O2/TiO2 bi-layer (1S/1R device) structure, fabricated by photochemical metal-organic deposition, as a solution for sneak current issue. Ce0.9Y0.1O2 material, possessing oxygen vacancies, was used as a potential barrier as well as oxygen reservoir which rectified the current of low resistance state without an electrical breakdown in 1S/1R device. TiO2 was adopted for resistive switching property, and TiO2 layer having mixed phase (anatase and brookite) showed typical diode switching behavior. The photochemical reaction of photochemical metal-organic deposition process and phase formation were monitored and established using by Fourier-transform infrared spectroscopy and X-ray diffraction, respectively. The 1S/1R device showed highly non-linear resistive switching characteristic, large on/off ratio of above three orders of magnitude with low operating current.
Electrical properties, Films, Resistive switching, ReRAM, Sneak current
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